MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH1027906

Kind Code:

A

Abstract:

To provide a method for fabricating a semiconductor device which can provide reliable electrical conduction between an upper line and a diffusion layer.

A field shield layer (FG) is formed on a semiconductor substrate 21 (step 1). After the step 1, a gate line(GL) is formed on the semiconductor substrate 21 and field shield layer (FG) (step 2). Next, a nitride film is formed so as to cover a surface of the gate line(GL) (step 3). A polycrystalline silicon film 215 is deposited on the entire surface of the semiconductor substrate 21 and then subjected to an etch-back process (step 4). After the step 4, an oxide film 216 is formed on the substrate 21 (step 5). A capacitor (CC) is formed and the oxide film 216 and 222 are etched to make a contact hole therein (step 6).

Inventors:

TOGAMI TERUTOSHI

Application Number:

JP19844496A

Publication Date:

January 27, 1998

Filing Date:

July 09, 1996

Export Citation:

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Assignee:

NIPPON STEEL CORP

International Classes:

H01L21/76; H01L21/316; H01L21/318; H01L21/768; H01L23/522; H01L29/78; (IPC1-7): H01L29/78; H01L21/316; H01L21/318; H01L21/76; H01L21/768

Attorney, Agent or Firm:

Kokubun Takaetsu

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