Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH11145408
Kind Code:
A
Abstract:
To provide a semiconductor device capable of making compatible MOS transistor characteristics with a ferroelectric capacitor characteristics.
In a manufacturing method of a semiconductor device for performing heat treatment to stabilize characteristics of a MOS transistor after formation of a ferrodielectric capacitor element provided with a lower part electrode 25, a ferroelectric 26 and an upper part electrode 27 on a semiconductor substrate 21, the heat treatment is performed in a nitrogen gas atmosphere.
Inventors:
NAMITA HIROMITSU
Application Number:
JP30878397A
Publication Date:
May 28, 1999
Filing Date:
November 11, 1997
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L21/8247; H01L21/8242; H01L21/8246; H01L27/10; H01L27/105; H01L27/108; H01L29/788; H01L29/792; (IPC1-7): H01L27/10; H01L27/108; H01L21/8242; H01L21/8247; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Tadashi Wakabayashi (4 others)