Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH11145559
Kind Code:
A
Abstract:

To provide a method for highly efficient manufacture of a II-VI semiconductor device.

In a semiconductor device manufacturing method by which a semiconductor element having an insulating film between an electrode film, which injects an electric current into a layer obtained by epitaxially growing a II-VI compound semiconductor on a substrate and the epitaxial film is manufactured, the insulating film is constituted in a polyimide film by cycloimidizing a polyimide precursor with a chemical dehydrating agent.


More Like This:
WO/2003/010771MEMORY SYSTEM WITH INDEPENDENTLY ACCESSIBLE MEMORY SUBSYSTEMS
JP2004260198METHOD FOR FORMING SEMICONDUCTOR MATERIAL OF LOW-RESISTANCE-TYPE COMPOUNDS
JP4433131Method of forming a silicon-based thin film
Inventors:
YAMAKOSHI HIDEO
MIZUI JUNICHI
TASAKA YOSHIYUKI
Application Number:
JP30403897A
Publication Date:
May 28, 1999
Filing Date:
November 06, 1997
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
MITSUBISHI HEAVY IND LTD
International Classes:
H01L21/36; H01L33/14; H01L33/28; H01L33/44; H01S5/00; (IPC1-7): H01S3/18; H01L21/36; H01L33/00
Attorney, Agent or Firm:
Toshiro Mitsuishi (2 outside)



 
Previous Patent: SEMICONDUCTOR OPTICAL ELEMENT, TRANSMITTING-RECEIVING MODULE, AND OPTICAL COMMUNICATION SYSTEM

Next Patent: SEMICONDUCTOR LASER AND OPTICAL DEVICE USING THE SAME