To provide a manufacturing method of a semiconductor device, having a contact hole the contacting surface of which is coated with a layer composed of a high-melting point metal, Si, and O, etc.

In a method for manufacturing a semiconductor device, an insulating film 11 is formed on a semiconductor substrate 10, and a contact hole 13 is formed through the insulating film 11. Then, after removing a natural oxide film 15, etc., formed in the contact hole 13, a barrier layer is formed in the contact hole 13 by oxidizing or nitriding the contacting surface 13a of the hole 13 and a layer 23 composed of a high-melting point metal, Si, and O, the high-melting point metal, Si, and N, or the high-melting point metal, Si, O, and N is formed on the contacting surface 13a of the hole 13 by heat- treating the semiconductor substrate 10 which carries the barrier layer at a high temperature.