Title:
MANUFACTURE FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5384561
Kind Code:
A
Abstract:
PURPOSE:To manufacture uniform Si3N4 on the Si substrate, by developing the N atom activated through high temperature heating of N2H4.
Inventors:
ITOU TAKASHI
NOZAKI TAKAO
SHINODA MASAICHI
NOZAKI TAKAO
SHINODA MASAICHI
Application Number:
JP16029476A
Publication Date:
July 26, 1978
Filing Date:
December 29, 1976
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/318; (IPC1-7): H01L21/318