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Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS54125968
Kind Code:
A
Abstract:
PURPOSE:To obtain the metalized layer in much easier way than the photoengraving process by covering previously the areas other than formation part of the metalized layer with the organic material and through the silk screen method when forming the metalized layer selectively on the surface of the semiconductor wafer. CONSTITUTION:The areas other than the formation region of the metalized layer is covered with the organic material on the semiconductor wafer through the screen printing method. In this case, the film thickness of about 10mum must be secured even with drying printing, and also the perfect evaporation or sublimation must be secured with the sintering temperature for the metalized layer. Accordingly, the organic mixture solution to be used is composed of material A and B. In other words, the polyhydric alcohol such as glycerol or the like is selected for material A; while material B uses the ethylcellulose or the like featuring a higher boiling point than material A. The mixture ratio is set to 1:1-3 wt% between A and B. Thus, the pattern of the organic material is formed first, and then Al or the like is deposited on the pattern to give a sintering in the N2 gas. As a result, the Al on the organic material floats up completely, thus ensuring an extremely easy removal of Al.

Inventors:
YAMAMOTO TAKESHI
Application Number:
JP3373878A
Publication Date:
September 29, 1979
Filing Date:
March 23, 1978
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/3205; H01L21/28; H01L21/283; (IPC1-7): H01L21/283; H01L21/88



 
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