Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5429969
Kind Code:
A
Abstract:
PURPOSE:To obtain complex impurity-density distribution through single ion injection, and to eliminate a grid defect by using both injection ions and knock-on atoms at the time of knock-on ion injection.
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Inventors:
FURUKAWA SEIJIROU
ISHIHARA HIROSHI
OGAWA TETSUYA
ISHIHARA HIROSHI
OGAWA TETSUYA
Application Number:
JP9590877A
Publication Date:
March 06, 1979
Filing Date:
August 10, 1977
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/265; (IPC1-7): H01L21/265