Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS56104435
Kind Code:
A
Abstract:
PURPOSE:To obtain a semiconductor device having stable characteristics by forming oxide films on both the front and the back surfaces of N<->N<+> type substrate, forming a base region and an emitter region on the back surface after preforming a polycrystalline film thereon and removing the polycrystalline film after high temperature heat treatment such as diffusion or the like is finished. CONSTITUTION:The oxide films 3, 4 are formed on the front and the back surfaces of the substrate 2, and then the polycrystalline film 19 is preformed on the back surface thereof. Subsequently, a photoresist film is formed thereon, the base region 7 and the emitter region 9 are formed thereon, and after the high temperature heat treatment such as the impurity diffusion of the substrate 2 is completed, the polycrystalline film 19 is removed therefrom. Thus, the semiconductor device having stable characteristics can be obtained with preferable workability.
Inventors:
YAMAUCHI MASAMITSU
Application Number:
JP736680A
Publication Date:
August 20, 1981
Filing Date:
January 23, 1980
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/22; H01L21/225; (IPC1-7): H01L21/22