Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS56120142
Kind Code:
A
Abstract:
PURPOSE:To improve the yield and reliability of a finished product by burying a part where a line is cut and to facilitate the microtransformation of the shape of an opening utilizing the elastic fluidity of the second metallic electroconductive film having a lower melting point than that of the first metallic electroconductive film. CONSTITUTION:A metallic electroconductive film 12a which passes through an opening 5 or 6 having a ridge A formed on the main surface of a semiconductor substrate 1 is provided. In case there is a part B where a line is cut in the said electroconductive film 12a, a metallic electroconductive film 13a consisting of, e.g., indium, tin solder, etc. having a lower melting point than that of the electroconductive film 12a, is formed on the electroconductive film 12a by means of vacuum evaporation, etc. Following this procedure, the electroconductive film 13a is heated with infrared ray, laser beam, etc. and is caused to flow in a plastic form, so that a partial opening of the electroconductive film 12a is filled to make the shape of an opening extremely fine. As a result, the yield and reliability of a finished product are improved.
Inventors:
DENDA MASAHIKO
TSUBOUCHI NATSUO
SATOU SHINICHI
ITOU KAZUO
TSUBOUCHI NATSUO
SATOU SHINICHI
ITOU KAZUO
Application Number:
JP2293380A
Publication Date:
September 21, 1981
Filing Date:
February 25, 1980
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01F5/00; H01L21/768; (IPC1-7): H01L21/88