MANUFACTURE OF SEMICONDUCTOR DEVICE

Japanese Patent JPS56137672

A

PURPOSE: To enable setting of a distance between a graft base and an emitter in one photographic etching process by making a plurality of openings different in width in a mark and introducing impurity aslant.

CONSTITUTION: An insulation film 102 is formed on a single-conduction type Si substrate 101 and then an opening part 103 is provided therein, through which an active base region 104 is formed. Next, after the insulation film is restored on the region 104, slit-shaped graft base openings 105 and an emitter opening 106 are provided. Then, ion injection is conducted from two directions tilted from the direction vertical to the substrate 101 in the direction perpendicular to the long sides of the opening part, whereby the graft base 108 is formed. On the occasion, the tilt angle is decided in consideration of the length of the short sides of the opening and of the thickness of the insulation film around the opening so as for the ion injection to be conducted not into the emitter region but into a graft base part. Since the positioning of the emitter opening and the graft base opening can be performed in one photographic etching process by this constitution, a trouble due to unmatching of openings is eliminated.

KOJIMA HIDETO
HONJIYOU MASAO
SUGIMOTO YOSHIKI

JP4088980A

October 27, 1981

March 28, 1980

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NIPPON ELECTRIC CO

H01L29/73; H01L21/265; H01L21/28; H01L21/331; H01L21/337; H01L29/72; H01L29/80; H01L29/808; (IPC1-7): H01L21/265; H01L29/10; H01L29/50; H01L29/80

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