Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS56142628
Kind Code:
A
Abstract:
PURPOSE:To improve the crystallinity of an Si film by a method wherein an Si single crystal layer is grown on a sapphire substrate, the inside is changed into an amorphous condition by means of ionic injection and the second Si film is grown on an annealed Si film in an epitaxial shape. CONSTITUTION:An Si single crystal layer 2 is grown on a sapphire substrate 1 with a (11-02) face in an epitaxial shape, Si ions are injected to the interface, an amorphous layer 4 is made up into the Si layer 2, the amorphous layer is grown epitaxially in the solid phase from a surface single crystal layer by annealing the whole for 3min at 1,000 deg.C, and the second Si layer is grown epitaxially. Thus, crystal defects in an Si film near the interface were minute twin crystals but are turned into dislocation while defect density is also reduced to one tenth, and a high-speed and low power consumption bipolar type large-scale integrated circuit is obtained.
Inventors:
INOUE TOMOYASU
YOSHII TOSHIO
YOSHII TOSHIO
Application Number:
JP4560980A
Publication Date:
November 07, 1981
Filing Date:
April 09, 1980
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L29/78; H01L21/205; H01L21/265; H01L21/86; H01L29/786; (IPC1-7): H01L21/265; H01L21/86; H01L29/78