Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5666030
Kind Code:
A
Abstract:
PURPOSE:To obtain high yields by changing impurity concentrations in a high temperature atmosphere with the lapse of time when an insulating film on a semiconductor substrate is converted into a glass layer. CONSTITUTION:An insulating film is formed on a major surface of a semiconductor substrate. The insulating film is converted into a glass layer by exposing the insulating film in a high temperature atmosphere including impurities and the impurities are diffused into the semiconductor substrate from the glass layer. In this process, impurity concentrations in the high temperature atmosphere are changed with the lapse of time. For example, the first impurity concentration at the temperature atmosphere of 950 deg.C including a phosphorus impurity is raised to 3,000ppm. Then, the impurity concentration is lowered to 2,000ppm to form an N type region. An oxide film on the major surface is instantly converted into a phosphorus glass layer by impurity diffusion at a high concentration by such a process. Therefore, the impurities are uniformly diffused even if the phosphrus impurity concentration is as low as 2,000ppm. So, the impurities are hard to be affected by a high temperature atmosphere state and high yields will be obtained.
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Inventors:
TAKADA TOSHIAKI
Application Number:
JP14252379A
Publication Date:
June 04, 1981
Filing Date:
November 02, 1979
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L29/73; H01L21/22; H01L21/223; H01L21/331; (IPC1-7): H01L29/72