Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5673433
Kind Code:
A
Abstract:
PURPOSE:To equalize the recovery time all over the surface and to enhance the yield rate by neighbouring a plurality of wafers, on the surfaces of which impurity sources are attached, compressing the wafers to obtain the intimate contact, and performing the diffusion in a container which completely encloses the wafers. CONSTITUTION:The wafers are arranged in the neighbouring positions in an SiC boat 21. The wafers are intimately contacted to that the same impurity sources of P type or N type on the surfaces of the wafers oppose each other. A lid 41 is covered, and the thermal diffusion is performed. In this constitution, the wafers are intimately contacted, the thermal capacity is increased, the temperature distribution is stabilized, and the temperature condition of the atmosphere is stabilized since the wafers are surrounded by the container. Since the defects are concentrated at the periphery of the wafer, the recovery time is equalized all over the surfaces and the yield rate is enhanced.
Inventors:
HACHIMAN SHIGEO
GOTOU KENICHI
NAKAZAWA MASAMITSU
HACHIMAN NAOTAKE
ENDOU HIKARU
GOTOU KENICHI
NAKAZAWA MASAMITSU
HACHIMAN NAOTAKE
ENDOU HIKARU
Application Number:
JP15099379A
Publication Date:
June 18, 1981
Filing Date:
November 21, 1979
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
TOSHIBA COMPONENTS
TOSHIBA COMPONENTS
International Classes:
H01L21/22; H01L21/225; (IPC1-7): H01L21/22