Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5737835
Kind Code:
A
Abstract:
PURPOSE:To prevent the generation of the breaking of wire on the electrode wiring of the subject semiconductor device by a method wherein, after a surface layer has been overetched by providing a mask material, a reactive etching is performed on the remaining film in the window opening process to be performed on the multilayer film consisting of three kinds of insulating films. CONSTITUTION:For example, an inter-layer film, consisting of a high density PSG film 2, a nitriding film 3 and a low dinsity PSG film 4, is provided on a simiconductor substrate 1 and a resist mask 5 is formed. Then, using a nitriding film as a stopper, an overetching is performed on the PSG film 4 approximately 0.1-3 times of the thickness of the PSG film 2 using a buffer solution, for example. Subsequently, reactive etching is performed using the resist 5 as a mask, an aperture is provided on the nitriding film 3 and the PSG film 2, and after the resist 5 has been removed, the edge section of the PSG film 2 is gently sloped by performing a heat treatment. Through these procedures, a through hole of the shape, with which a breaking of wire on the metal wiring will hardly be generated, can be stabilizedly formed on the multilayer insulating film in one masking process.
Inventors:
SAKATA MASANORI
Application Number:
JP11386880A
Publication Date:
March 02, 1982
Filing Date:
August 19, 1980
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/302; H01L21/3065; (IPC1-7): H01L21/302
Domestic Patent References:
| JPS52117554A | 1977-10-03 | |||
| JPS54583A | 1979-01-05 |