MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPS577932

Kind Code:

A

Abstract:

PURPOSE:To enable the copying of a mask pattern to wafer to be accurately performed, before the exposing process of the wafer, by preliminarily forming the concave grooves in the wafer surface, and providing intimate contact between the wafer and the mask. CONSTITUTION:Before the exposing process of the wafer, etcing is performed at the part of the wafer 201 where scribe lines are formed later on, and the concave grooves 204 and 204' whose width is several tens of mu and depth is 1mu are provided. Since the deep grooves are preliminarily formed, air mass is not present between the wafer 201 and the mask 202, and the wafer and the mask are intimately contacted throughout the area. In this method, the mask pattern is accurately copied, and fine machining can be accomplished.

Inventors:

HAMANO KUNIYUKI
SAKAMOTO MITSURU
NAKAMAE MASAHIKO

Application Number:

JP8320480A

Publication Date:

January 16, 1982

Filing Date:

June 19, 1980

Export Citation:

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Assignee:

NIPPON ELECTRIC CO

International Classes:

H01L21/027; H01L21/30; (IPC1-7): H01L21/30

Next Patent: JPS577933