Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS58157129
Kind Code:
A
Abstract:
PURPOSE:To realize a better contact point by a method wherein a photoresist used for the formation of a contact window is retained to be removed only after the application of a metal coating for the formation of an electrode to ensure that emitter and base contact properly in line with electrodes without displacement. CONSTITUTION:An emitter layer 7 is formed by the diffusion technique, and the emitter window 6 is covered with an SiO2 film 8. By photoetching, an emitter contact window 10 and base contact window 11 are provided in the SiO2 film 8 and another SiO2 film 5, respectively, with a photoresist film 9 working as a mask. The photoresist film 9 should be as thick as an electrode Au layer (1- 2mum thick) or more. The photoresist film 9 is retained as it is and an electrode- forming metal 12 is subjected to the electron beam evaporation method at low temperatures so that the photoresist film 9 should not be deformed. The photoresist film 9 is then removed with fuming nitric acid or acetone, thereafter metal remains only on the contact points to work as electrodes.
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Inventors:
HOTSUTA KAZUHIKO
Application Number:
JP3972982A
Publication Date:
September 19, 1983
Filing Date:
March 12, 1982
Export Citation:
Assignee:
MATSUSHITA ELECTRONICS CORP
International Classes:
H01L21/28; (IPC1-7): H01L21/28
Domestic Patent References:
| JPS5578532A | 1980-06-13 |
Attorney, Agent or Firm:
Akira Kobiji (2 outside)