Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS59132617
Kind Code:
A
Abstract:
PURPOSE:To realize a semiconductor device with a high dielectric strength, by forming first contact opening regions by etching an oxide film, forming an insulating film on the surface including the opening regions, carrying out a heat treatment, and etching the insulating film to form second contact opening regions which are provided such as to respectively cover all over the first contact opening regions. CONSTITUTION:An oxide film 9 is etched to form first contact opening regions 60, 70, 80 respectively corresponding to an emitter region 6, a base region 7 and a collector region 8. After a silicon oxide film 10 is formed all over the surface by the CVD method under atmospheric pressure, a PSG film 11 is formed in a POCl3 atmosphere. In order to stabilize the PSG film 11, a heat treatment is carried out in an oxygen atmosphere. The silicon oxide film 10 and the PSG film 11 are simultaneously etched to form second contact opening regions 600, 700, 800 such that these regions respectively cover all over the first contact opening regions 60, 70, 80. After aluminum is deposited on the whole surface, electrode patterns 12, 13, 14 are formed. Finally, a heat treatment is carried out in a nitrogen atmosphere in order to form ohmic contacts, thereby obtaining a vertical NPN transistor of high-dielectric strength IC.
Inventors:
HARA TOMOOKI
Application Number:
JP694283A
Publication Date:
July 30, 1984
Filing Date:
January 19, 1983
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L29/78; H01L21/28; H01L21/3205; (IPC1-7): H01L21/88; H01L29/78
Domestic Patent References:
| JPS5316274A | 1978-02-15 | |||
| JPS51102558A | 1976-09-10 |
Attorney, Agent or Firm:
Uchihara Shin