MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPS5917252

Kind Code:

A

Abstract:

PURPOSE:To improve reliability regarding damp-proofing by forming an aluminum oxide film on the surface of aluminum exposed onto a semiconductor pellet. CONSTITUTION:A bonding pad section 5 on the semiconductor pellet and an external lead frame 3 are connected by a metallic wire 4, and left as they are for a fixed time in oxygen plasma, and the aluminum oxide film 6 is formed to an aluminum exposed section on the semiconductor pellet. The whole is sealed with a resin 7. The conditions (the flow rate of oxygen, plasma-generating power, time, etc.) of oxygen plasma are set properly according to a plasma device and the desired thickness of the aluminum oxide film. Consequently, the corrosion of aluminum by moisture can be prevented. When the metallic wire is of aluminum, the aluminum oxide film is also formed to the surface of the aluminum wire, and the corrosion of the aluminum wire due to moisture can be prevented.

Inventors:

YOSHIDA TOORU
ISHIDA TOSHIHARU

Application Number:

JP12563282A

Publication Date:

January 28, 1984

Filing Date:

July 21, 1982

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

H01L23/52; H01L21/31; H01L21/316; H01L21/3205; H01L21/60; H01L23/28; (IPC1-7): H01L21/60; H01L21/88; H01L23/02

Attorney, Agent or Firm:

Toshiyuki Usuda

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