Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS59205711
Kind Code:
A
Abstract:
PURPOSE:To facilitate single-crystallization of a non-single-crystal film without damaging LSI formed in a wafer by a method wherein facing linear beams are focused on both surface of the wafer and the wafer is relatively shifted against the beams. CONSTITUTION:An Si wafer 21 is placed between the 1st linear light source 25 and the 2nd linear light source 26 which are facing each other. The linear beams converged from the sources 25, 26 are arranged so as to heat a part 23a of an amorphous Si film 23. When the wafer 21 is advanced relatively against the beams to the direction of an arrow I , the heated and smelted part 23a is then solidized and single-crystallized. With this constitution, even if a three-dimensional LSI is formed in the wafer 21, the LSI is not damaged.
Inventors:
SAKURAI JIYUNJI
Application Number:
JP5587383A
Publication Date:
November 21, 1984
Filing Date:
March 31, 1983
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
C30B13/00; C30B13/24; H01L21/20; H01L21/26; H01L21/268; H01L21/324; (IPC1-7): H01L21/263; H01L21/84
Domestic Patent References:
| JPS5797620A | 1982-06-17 | |||
| JPS5846622A | 1983-03-18 |
Attorney, Agent or Firm:
Motoaki Hisagi