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Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5925219
Kind Code:
A
Abstract:
PURPOSE:To prevent the disconnection of Al wires as well as to form the wiring electrode which can be highly integrated for the titled semiconductor device by a method wherein a flat surface is formed in advance by filling up the first Al wiring film in the concavity of an electrode window. CONSTITUTION:An insulating layer 32 is formed on a semiconductor substrate 31, and a polycrystalline silicon layer 23 is formed on said insulating layer 32. Then, a desired resist film mask 34 is formed on the polycrystalline silicon layer 33, an isotropic etching is performed on said polycrystalline silicon layer 33, and then an anisotropic etching is performed on the insulating layer 32. On the whole surface of the semiconductor substrate 31, a wiring metal film 35 is vapor-deposited, said metal film 35 is lifted off and removed by removing the resist film 34, and then the polycrystalline silicon layer 33 located on the whole surface is removed. Subsequently, works are proceeded in accordance with the ordinary procedures.

Inventors:
TANIMOTO YOSHIAKI
Application Number:
JP13416482A
Publication Date:
February 09, 1984
Filing Date:
July 30, 1982
Export Citation:
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Assignee:
FUJITSU KK
International Classes:
H01L21/3205; H01L21/28; (IPC1-7): H01L21/88



 
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