Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5984442
Kind Code:
A
Abstract:
PURPOSE:To prevent occurrence of cutting of Al wire by performing anisotropic dry etching upon a contact hole which is opened on a first insulating film and whose edge is covered with a second insulating film to form a gentle shape. CONSTITUTION:A diffusion region 7 of inverse conductive type to that of a substrate is formed on a main surface of an Si semiconductor substrate 1 and a contact hole 4 is opened on an insulating film 2 as a surface. Next, an insulating material having viscosity is coated on the whole surface to form a second insulating film 8. At this time, a steep edge of the hole 4 is covered so as to be made gentle form. Next, anisotropic etching is done to the whole surface to remove the film 8 to uniform thickness, thereby a second insulating film 8A at steep edge part of the hole 4 remains as a gentle shape and the substrate 1 of the contact part is exposed. Al is deposited on whole surface and patterning with photoresist processing is done to remove unnecessary part except wiring 6 by etching, thereby preventing occurrence of cutting of Al wiring.
Inventors:
ITOU HIROSHI
Application Number:
JP19388482A
Publication Date:
May 16, 1984
Filing Date:
November 04, 1982
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/3205; H01L21/306; (IPC1-7): H01L21/306
Domestic Patent References:
| JPS56144553A | 1981-11-10 | |||
| JPS50110771A | 1975-09-01 |
Attorney, Agent or Firm:
Uchihara Shin