Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS60113478
Kind Code:
A
Abstract:
PURPOSE:To form an open groove without giving damages to an amorphous semiconductor by a method wherein a metal with a high conductivity is formed on a photo transmitting conductive film in the upper surface of a non single crystal semiconductor and further coated with an insulation film with a low thermal conductivity. CONSTITUTION:The non single crystal semiconductor 15 is formed by plasma vapor phase reaction. This semiconductor consists of a P type SixC1-x 2, an I- type amorphous semiconductor 3, and an N type microcrystallized semiconductor 4. Further, a photo transmitting conductive film 5 is formed thereon by the electron beam evaporation method. Besides, a metallic conductor 6 and chromium are formed thereon by the resistance heating method or the electron beam evaporation method. An insulator 8 produced by the electron beam evaporation method is formed thereon. These films are then irradiated with laser beams, and thus the open groove 10 or open hole is formed by removing residuals in the region to be irradiated and in its neighborhood.
Inventors:
YAMAZAKI SHIYUNPEI
ITOU KENJI
WATABE SATSUKI
ITOU KENJI
WATABE SATSUKI
Application Number:
JP22117283A
Publication Date:
June 19, 1985
Filing Date:
November 24, 1983
Export Citation:
Assignee:
HANDOTAI ENERGY KENKYUSHO
International Classes:
H01L31/0248; H01L21/268; H01L31/02; H01L31/04; H01L31/20; (IPC1-7): H01L31/02; H01L31/08