Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS60117749
Kind Code:
A
Abstract:
PURPOSE:To contrive to increase the density and to reduce the number of processes by the increase in operating speed by a method wherein an impurity of the same conductivity type as that of a collector impurity region is introduced to a polycrystalline Si layer or a single crystal Si layer before or after annealing by the irradiation of the polycrystalline Si layer with energy beams. CONSTITUTION:A poly silicon film 12 of required pattern is adhered on an SiO2 layer 11, and antimony is ion-implanted. Next, the film 12 is laser-annealed with YAG lasers, resulting in its single crystallization; and the first N<+> type single crystal Si layer 12a is formed by patterning. In place of this process, either laser-annealing of the film 12 at first, its doping with an N<+> type impurity, and then patterning; or patterning at first, doping, and laser-annealing can be utilized. The second N type single crystal Si layer 13 is formed on the single crystal layer 12a, and, when they are surrounded with an SiO2 layer 11a an island surrounded with an insulation film (SiO2 film) is formed. A bi-polar transistor is formed in this island.
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Inventors:
HATAISHI OSAMU
SASAKI NOBUO
HIDESHIMA OSAMU
KAWAMURA SEIICHIROU
TAKAOKA MATSUO
SASAKI NOBUO
HIDESHIMA OSAMU
KAWAMURA SEIICHIROU
TAKAOKA MATSUO
Application Number:
JP22566183A
Publication Date:
June 25, 1985
Filing Date:
November 30, 1983
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/762; H01L21/02; H01L21/20; H01L21/331; H01L21/76; H01L27/12; H01L29/73; H01L29/732; (IPC1-7): H01L21/20; H01L21/263; H01L27/12; H01L29/72
Attorney, Agent or Firm:
Koshiro Matsuoka