Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS60140812
Kind Code:
A
Abstract:
PURPOSE:To change a desired region in a semiconductor layer applied on an amorphous substrate or a thin-film excellently into a signle crystal by previously forming a protective film on a semiconductor thin-film layer by using a substance optically transparent to projecting laser beams. CONSTITUTION:A thremal oxide film 2 is formed on a single crystal silicon substrate 1, and a polycrystalline silicon layer 3 is further shaped on the thermal oxide film 2. An oxide film 4 is formed as a protective film as a first layer, and silicon nitride films 5 are shaped as protective films as second layers. The upper section of a region to be changed into a single crystal in the polycrystalline silicon layer 3 is removed through a photolighographic process, and the silicon nitride films 5 are removed. When such structure is irradiated by a laser, a temperature rise in a region 11 consisting of one layer of the protective film is made larger than that in regions 12 composed of two layers of the protective films because laser power reaching to the polycrystalline silicon layer 3 is larger than the region 12 in the region 11. Consequently, solidification starts from the regions 12 consisting of two layers of the protective films at a low temperature as shown in the arrows A, and gradually progresses to the resion 11 composed of one layer of the protective film Accordingly, an excellent single crystal layer is obtained in the regions 12 consisting of two layer of the protective films.
Inventors:
OOKURA OSAMU
SUNAMI HIDEO
KUSUKAWA KIKUO
SUNAMI HIDEO
KUSUKAWA KIKUO
Application Number:
JP24692883A
Publication Date:
July 25, 1985
Filing Date:
December 28, 1983
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L27/00; H01L21/20; (IPC1-7): H01L21/263; H01L27/00
Attorney, Agent or Firm:
Katsuo Ogawa (1 person outside)