Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS60140881
Kind Code:
A
Abstract:
PURPOSE:To enable the formation of a metal film by plating at the same time with a uniform p<+> layer by a method wherein a paste substance mainly made of Al powder, a kind or more of metals of Sn, In, and Sb, and a metal forming a high melting point alloy with Al is printed on a substrate and calcined. CONSTITUTION:Al paste compounded with at least a kind of metal selected out of Sn, In, and Sb is printed on the substrate 1 of silicon or the like and calcined, when a uniform p<+> layer 3 is formed, and the metal film by plating can be formed on the Al layer formed at the same time. The addition of the metal forming a high melting point alloy with Al into this Al paste eliminates the cohesion liable to generate in the Al layer during calcination or the generation of cracks. Particularly Co, Cr, Mn, Mo, Ti, Zr, B, or W is effective as the metal forming a high melting point alloy with Al that is very effective to form a smooth Al layer and a uniform p<+> layer 3.
Inventors:
MATSUYAMA HARUHIKO
NAKATANI MITSUO
OKUNAKA MASAAKI
YOKONO ATARU
SAITOU TADASHI
MATSUKUMA KUNIHIRO
SUZUKI SATORU
MIDORIKAWA SUMIYUKI
NAKATANI MITSUO
OKUNAKA MASAAKI
YOKONO ATARU
SAITOU TADASHI
MATSUKUMA KUNIHIRO
SUZUKI SATORU
MIDORIKAWA SUMIYUKI
Application Number:
JP24695083A
Publication Date:
July 25, 1985
Filing Date:
December 28, 1983
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L31/04; H01L21/283; H01L21/288; H01L31/0224; (IPC1-7): H01L21/28; H01L31/04
Domestic Patent References:
| JPS54150994A | 1979-11-27 | |||
| JPS5885574A | 1983-05-21 | |||
| JPS4882375A | 1973-11-02 | |||
| JPS5478491A | 1979-06-22 | |||
| JPS5110839A | 1976-01-28 | |||
| JPS57208182A | 1982-12-21 |
Attorney, Agent or Firm:
Katsuo Ogawa