Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS60142535
Kind Code:
A
Abstract:
PURPOSE:To enable to easily form an almost flat isolated region having two types of isolation groove depth by a method wherein, when a deep isolated region and a shallow isolated region are going to be formed, first the deep isolation groove is filled up to a certain degree, and then the remainder of the deep isolation groove and the shallow isolation groove are filled up simultaneously. CONSTITUTION:A PolySi film 8' is left in the first isolation groove only by performing an etching on a PolySi film 8 using the first photoresist film 9' as a mask. Subsequently, the first photoresist film 9' is removed, and the fourth SiO2 film 10 is fomed by oxidizing the PolySi film 8' by performing a high-pressure oxidizing method and the like. The thickness of the oxide film used at this time is to be set in such a manner that the film will be filled to the middle point of the isolation groove 5, and not to completely fills up the groove. Then, after the photoresist pattern 11 to be used for formation of the second isolation groove has been formed, the second isolation groove 12 is formed on the part 16 requiring a shallow isolated region by performing an etching on the first SiO2 film 2, the first Si3N4 film 3 and a semiconductor substrate 1 using an anisotropic dry etching method and the like.
Inventors:
SHIMODA HIDEAKI
Application Number:
JP25085283A
Publication Date:
July 27, 1985
Filing Date:
December 28, 1983
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/302; H01L21/76; (IPC1-7): H01L21/302
Attorney, Agent or Firm:
Toshio Nakao