MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPS6045019

Kind Code:

A

Abstract:

PURPOSE:To control the etching quantity of the surface of a substrate at manufacture of a semiconductor device by a method wherein the ratio of gas flow rates at wiring metal etching time according to a plasma irradiation system is so set as to make the etching quantity of the semiconductor substrate to be extremely small, and the silicon component in a wiring pattern is removed before a resist film is to be exfoliated according to oxygen plasma. CONSTITUTION:An insulating film of silicon oxide film, etc. is formed on the surface of a silicon semiconductor substrate 12 formed with a semiconductor element according to a shallow junction construction. A contact hole 13 is formed in the insulating film thereof corresponding to the electrode part of the semiconductor element, an electrode material of aluminum, etc. containing silicon is adhered to be formed on the surface of the semiconductor substrate formed with the contact hole 13 thereof, a resist film pattern is formed on the surface of the electrode material thereof corresponding to the prescribed wiring pattern 11, and the electrode material other than the resist film pattern thereof is removed according to the plasma etching method. After then, the surface of the semiconductor substrate is irradiated with plasma to remove the silicon component containing in the electrode material corresponding to the wiring pattern.

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