Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6089916
Kind Code:
A
Abstract:
PURPOSE:To obtain a high quality semiconductor device in utilization of a high concentration impurity effect of a substrate by removing the periodic distribution of the specific resistance of an active layer and by preventing the effect of oxygen contained in the epitaxial substrate. CONSTITUTION:A CZ, N type Si substrate 11 having a specific resistance of 8- 12OMEGAcm is heat treated for 4hr in the atmosphere of argon at 1,100 deg.C so as to diffuse the oxygen contained in the substrate outwards. The substrate is then subjected to heat treatment for 16hr at 700 deg.C in the atmosphere of oxygen so as to form nuclei for generating precipitates in a bulk. The substrate is further heat treated for 6hr at 1,000 deg.C in the atmosphere of oxygen to grow the precipitates. On the substrate 11, a region 12 free of defects, a region 13 with defects of high density, an N type high concentration impurity layer 14 and an N type epitaxial layer 15 are formed. In such a manner, the periodic distribution of the specific resistance of the active layer is removed and the effect of oxygen contained in the epitaxial substrate is prevented, so that a high quality semiconductor device can be produced.
Inventors:
KURIYAMA TOSHIHIRO
MATSUMOTO SHIGENORI
HIROSHIMA YOSHIMITSU
MATSUMOTO SHIGENORI
HIROSHIMA YOSHIMITSU
Application Number:
JP19854583A
Publication Date:
May 20, 1985
Filing Date:
October 24, 1983
Export Citation:
Assignee:
MATSUSHITA ELECTRONICS CORP
International Classes:
H01L21/322; H01L21/205; (IPC1-7): H01L21/22; H01L21/322
Attorney, Agent or Firm:
Toshio Nakao