Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS61120426
Kind Code:
A
Abstract:
PURPOSE:To obtain a large capacity at a low temperature and with a small area, by overlaying an oxide film of Ta, Ti, Nb, Hf, Zn, Al or the like on an SiO2 film on an Si substrate and selectively heating the SiO2 film with electromagnetic waves. CONSTITUTION:Ta2O5 is applied on an Si substrate 1 by the reactive spattering, whereby an SiO2 thin film 3 is formed in the interface between the Si and the Ta2O5. When CO2 laser beams having a wavelength of 9-10mum are applied thereto, only the SiO2 3 is heated thereby. According to this method, the interfa cial level density is decreased and thus the density of defects can be decreased. Consequently, a highly reliable capacity can be obtained.
Inventors:
JINRIKI HIROSHI
NISHIOKA TAIJO
MUKAI KIICHIRO
NISHIOKA TAIJO
MUKAI KIICHIRO
Application Number:
JP24066884A
Publication Date:
June 07, 1986
Filing Date:
November 16, 1984
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L27/04; H01L21/316; H01L21/822; (IPC1-7): H01L27/04
Attorney, Agent or Firm:
Akio Takahashi