MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPS62133722

Kind Code:

A

Abstract:

PURPOSE: To determine whether a pattern is formed in a desirable manner or not and to improve the yield, by anisotropically dry etching a layer to be etched while masking it with a two-layer resist pattern.

CONSTITUTION: A first layer 6a of resist pattern is formed on a layer to be etched 5 such as a polysilicon layer. Then a second layer 7a of resist pattern is overlaid on the first layer, the second layer 7a being thicker and narrower than the first layer. The layer to be etched 5 is then dry etched anisotropically as it is masked with the stepped pattern 6a and 7a. As a result, a polysilicon pattern 5a having a stepped profile corresponding to the profile of the stepped pattern 6a and 7a is formed in the etched layer 5. It is thereby determined whether the pattern is formed in a desirable manner or not and thus the yield can be improved.

Inventors:

SATO HIROHIKO

Application Number:

JP27398685A

Publication Date:

June 16, 1987

Filing Date:

December 05, 1985

Export Citation:

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Assignee:

RICOH KK

International Classes:

H01L21/336; H01L21/302; H01L21/3065; H01L29/78; (IPC1-7): H01L21/302; H01L29/60; H01L29/78

Attorney, Agent or Firm:

Shigeo Noguchi

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