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Patent Searching and Data


Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS62133723
Kind Code:
A
Abstract:

PURPOSE: To facilitate the processing of polyimide resin to shape it finely and steeply, by etching an insulation film, forming a pattern, wet etching a part of the polyimide layer and dry etching the polyimide resin to remove it.

CONSTITUTION: A polyimide resin layer 2 is formed on a semiconductor substrate 1, and an insulation film 3 is formed on the polyimide layer 2. Photoresist 4 is applied thereon and a pattern is formed. The insulation film 3 is removed according to the shape of the pattern. The resin layer 2, masked with the resist 4, is etched with a hydrazine etchant to remove a part thereof. The resin layer 2 is then dry etched and removed with the insulation layer 2 used as a mask. After that, the insulation film 3 is removed. In this manner, the polyimide can be processed easily to shape it finely and steeply.


Inventors:
KUMAMOTO HIROSHI
Application Number:
JP27451185A
Publication Date:
June 16, 1987
Filing Date:
December 05, 1985
Export Citation:
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Assignee:
NEC CORP
International Classes:
H01L21/306; H01L21/302; H01L21/3065; (IPC1-7): H01L21/302; H01L21/306
Attorney, Agent or Firm:
Uchihara Shin