MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPS62133723

Kind Code:

A

Abstract:

PURPOSE: To facilitate the processing of polyimide resin to shape it finely and steeply, by etching an insulation film, forming a pattern, wet etching a part of the polyimide layer and dry etching the polyimide resin to remove it.

CONSTITUTION: A polyimide resin layer 2 is formed on a semiconductor substrate 1, and an insulation film 3 is formed on the polyimide layer 2. Photoresist 4 is applied thereon and a pattern is formed. The insulation film 3 is removed according to the shape of the pattern. The resin layer 2, masked with the resist 4, is etched with a hydrazine etchant to remove a part thereof. The resin layer 2 is then dry etched and removed with the insulation layer 2 used as a mask. After that, the insulation film 3 is removed. In this manner, the polyimide can be processed easily to shape it finely and steeply.

Inventors:

KUMAMOTO HIROSHI

Application Number:

JP27451185A

Publication Date:

June 16, 1987

Filing Date:

December 05, 1985

Export Citation:

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Assignee:

NEC CORP

International Classes:

H01L21/306; H01L21/302; H01L21/3065; (IPC1-7): H01L21/302; H01L21/306

Attorney, Agent or Firm:

Uchihara Shin

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