MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPS6242434

Kind Code:

A

Abstract:

PURPOSE: To prevent the disconnection of upper layer wiring making step difference in wiring part gentle as well as thickness of interlayer insulating film coated therewith even by means of repeating isotropic and anisotropic etching processes several times.

CONSTITUTION: A wiring formation surface 1 on a substrate is coated with an Al layer 2 and then a resist mask 3 is formed thereon. Next a bit of general isotropic chemical etching or isotropic plasma etching is performed to etch the Al 2 creeping in below the mask 3. Then a bit of anisotropic etching is performed to leave the part creeping in below the mask 3 entirely. Moreover anisotropic and isotropic etching processes are alternately performed to leave Al in the mask part but removing the residual Al entirely. Finally the mask 3 is removed to produce an Al wiring 2a with both side steps forming gentle slopes.

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Inventors:

OOYAMA YASUO

Application Number:

JP18234385A

Publication Date:

February 24, 1987

Filing Date:

August 19, 1985

Export Citation:

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Assignee:

NEC CORP

International Classes:

H01L21/3205; H01L21/302; H01L21/306; H01L21/3065; (IPC1-7): H01L21/302; H01L21/306; H01L21/88

Attorney, Agent or Firm:

Uchihara Shin

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