MANUFACTURE OF SEMICONDUCTOR DEVICE - MATSUSHITA ELECTRONICS CORP

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPS6242511

Kind Code:

A

Abstract:

PURPOSE: To manufacture a high-quality recrystallized film whose orientation is suitably controlled by a method wherein an insulating film is formed on a substrate, an opening is provided in its part, a single crystalline semiconductor layer is embedded in the opening, and a polycrystalline semiconductor film is formed on the insulating film and recrystallized.

CONSTITUTION: An SiO2 film is grown on a P-type Si substrate 1 in water vapor with thermal oxidation for specified time. Then, an opening section reaching the substrate is formed with photolithography and reactive ion-etching with CF4 and H2 as etchant. A single crystalline Si layer is formed within the opening with selective epitaxial growth. After that, a poly-Si film 3 is deposited with depression CVD method which thermally decomposites SiH4 gas. A substrate structure is obtained with photolithography and plasma etching with CF4 and O2 as etchant. Then, the substrate is annealed with CW-AR laser to recrystallize the film 3.

Inventors:

SUSA MASAHIRO
FUJII EIJI
HIROSHIMA YOSHIMITSU

Application Number:

JP18217985A

Publication Date:

February 24, 1987

Filing Date:

August 20, 1985

Export Citation:

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Assignee:

MATSUSHITA ELECTRONICS CORP

International Classes:

H01L21/20; H01L21/263; (IPC1-7): H01L21/20; H01L21/263

Attorney, Agent or Firm:

Toshio Nakao

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