PURPOSE: To simplify a production process and to reduce a production cost by a method wherein, after a process to treat the rear of a silicon wafer has been completed, a polyimide film is patterned to make a final surface protective film.

CONSTITUTION: After a polyimide film 4 has been formed on the surface of a silicon wafer 1, the rear is treated; after this treatment, the polyimide film 4 is patterned to make a final surface protective film of a semiconductor device. Accordingly, the surface of the silicon wafer 1 can be protected by the polyimide film 4 during a process to treat the rear of the silicon wafer 1, and the surface of the semiconductor device can be protected finally. By this setup, a resist film is not required; a process to coat the resist film and to remove it by using an organic solvent can be omitted.