Title:
MANUFACTURE OF SEMICONDUCTOR ELECTRIC HEAT FILM
Document Type and Number:
Japanese Patent JPH07202273
Kind Code:
A
Abstract:
PURPOSE: To form an exothermic thin film of thickness in a specific range with a coating of atomization growth for shorter heating period by preparing a material with the amount of admixture as a weight in a specific range, material-mixing the material and medium to the weight in a specific range, and further, treating the material at a temperature in a specific range for a specific period. CONSTITUTION: With a metal compound as main constituent, its mount is material-prepared (10) by a weight of 1-10%, using such compound as antimony of appropriate amount as an admixture during the manufacturing process. Then the material is evenly agitated, mixed with a medium such as water, so that material is mixed by a weight of 20-60% in amount. Meanwhile, a base material 12 quartz or the like is washed, dried, and hated, and it is left in a stove at a high temperature of 400-850 deg.C for 10-30 minutes. Lastly, atomization growth (13) is allowed to conducted to a coating thickness of 3-300 μ, and a semiconductive-type exothermic thin film is formed, as one body, together with the base material. Thus, heating is performed quickly to realize effect of saving of electricity.
Inventors:
RIN PANNTEIEN
Application Number:
JP31330693A
Publication Date:
August 04, 1995
Filing Date:
December 14, 1993
Export Citation:
Assignee:
URANPU ENTERP CO LTD
International Classes:
H01L35/00; H01L37/00; (IPC1-7): H01L35/00
Attorney, Agent or Firm:
Tadahiko Ito (1 outside)
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