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Patent Searching and Data


Title:
MANUFACTURE OF SEMICONDUCTOR ELEMENT STACK
Document Type and Number:
Japanese Patent JPS6066849
Kind Code:
A
Abstract:

PURPOSE: To obtain the titled stack of a high current rating with intervals between elements kept constant by a method wherein, when the semiconductor elements are cascade-connected into the stack, many elements are arranged in the direction of the same polarity and then installed to an intermediate body made of an insulating resin having a structure in which these elements are easily cut off, and the elements of only the number necessary to a desired voltage are cut off and then mutually wired, thereafter resin-sealed in an insulation case.

CONSTITUTION: A plurality of the semiconductor elements 2 such as diodes are arranged in the direction of the same polarity and then installed to the intermediate body 9 of element groups molded with an insulation resin 8. At this time, the intermediate body 9 is kept provided with many V-grooves for mutual insulation, the elements 2 being fixed on the crests of the grooves, and the bottom of the resin 8 filling the grooves being then enabled to be easily cut off. Thereafter, the elements 2 are cut off into groups and then connected 4 with solder as fixed according to necessary withstand voltages. They are contained in the insulation case 6, and intermediate bodies 11 split are sealed with the insulation resin 7.


Inventors:
SHINDOU TAHIRO
Application Number:
JP17544883A
Publication Date:
April 17, 1985
Filing Date:
September 22, 1983
Export Citation:
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Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L25/10; H01L25/07; H01L25/11; (IPC1-7): H01L25/14
Attorney, Agent or Firm:
Uchihara Shin