To form marks with high accuracy by forming etched grooves on the outside of an area for semiconductor element on the surface of a semiconductor substrate containing a substrate and a laminated structure formed on the substrate as markers for segmenting a plurality of semiconductor elements incorporated in the substrate.
Openings 30 are formed in non-element areas T formed between laser chip widths t2. The openings 30 can be formed at prescribed locations in the central parts of belt-like zones 29 with high accuracy by forming an etching mask 26 having openings 30 by photolithography and etching. Etched grooves elongated downward are formed at prescribed locations in the zones 29. Since the etched grooves can be formed relatively easily with high accuracy at desired parts on cutting lines by performing selective etching by using the mask 26, markers can be formed with high accuracy when the grooves are utilized as the markers.
YAMADA MITSUSHI
YAEGASHI HIROKI
HORIKAWA HIDEAKI
