To provide a semiconductor element of superior characteristics by forming a silicon carbide film of good quality using a silicon substrate of low cost, and by preventing carriers from flowing into the silicon substrate, to restrict current flow within the silicon carbide film, when manufacturing the semiconductor element comprising the silicon carbide film formed on the silicon substrate.
In a condition wherein a silicon layer, having a thickness of 10 (1nm) or more, remains on the surface of a silicon substrate 1, oxygen ions 2 are implanted into the silicon substrate 1. Then, after heat treatment or in formation of a silicon carbide film 7, a silicon oxide layer 4 is formed by heating, and the silicon carbide film 7 is formed on the silicon layer which is separated from the substrate 1 by the silicon oxide layer 4.
UCHIDA MASAO
KITAHATA MAKOTO
KITAGAWA MASATOSHI
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