PURPOSE: To obtain an insulating film having excellent characteristics and an interface of the insulator and a semiconductor, by manufacturing the interface of the insulator and the semiconductor by steps for heating an InP substrate in an arsenic atmosphere, cleaning the surface of the substrate and forming and stabilizing a crystal layer including arsenic and a plasma chemical vapor growth method.
CONSTITUTION: Organic cleaning and pretreatment for chemical etching are performed on an InP substrate 1. Then the InP substrate 1 is introduced in a molecular beam epitaxy apparatus. After a super-high vacuum state is obtained by exhaustion of air, heating is performed under the high-intensity projection of an arsenic molecular beam. Thus a natural oxide film formed in the pretreatment is decomposed and the surface is cleaned. A layer 5 including stable arsenic is formed on the surface. Then the stabilized InP substrate 1 is taken out of the molecular beam epitaxy apparatus and introduced into a plasma CVD apparatus. Then an insulating film 4 is formed. Desorption of phosphorus from the InP substrate 1 due to the effect of the plasma is suppressed by the effect of the layer 5 including the arsenic, and disturbance in crystalline property is prevented.
MATSUI TERUHITO
OTSUKA KENICHI
ABE YUJI
MARUNO SHIGEMITSU
OGATA HITOSHI
