To provide a manufacture for a high quality semiconductor film which has a large particle size, high in crystallinity, and low in surface roughness.

Energy light irradiation for obtaining a polycrystalline silicon film is conducted twice, and the first irradiation is made in a vacuum having no oxide film removal processing of a semiconductor film surface, or is made in the atmosphere or in the ambience in which any gas is filled up to the exclusion of vacuum. A surface processing of a semiconductor film is performed prior to the second irradiation, and after the oxide film is eliminated, the irradiation is made in vacuum. Furthermore, intensity of second energy light irradiation is adjusted so as not to exceed the irradiation intensity of the first energy lights.