MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

Document Type and Number:

Japanese Patent JPH07307386

Kind Code:

A

Abstract:

PURPOSE: To improve the effect of a breake current in a semiconductor integrated circuit device having an antifuse, which is formed making a dielectric film interpose between metal electrodes.

CONSTITUTION: In the case where an FPGA (a Field Programmable Gate Array) having an antifuse 6 formed by providing an upper electrode consisting of a TiW film on a lower electrode, which is formed on a semiconductor substrate and consists of a TiW film, via a dielectrode film 6c consisting of an amorphous silicon film is programmed, the antifuse 6 is used so that the FPGA is programmed by applying a DC voltage to the antifuse 6 and thereafter, an AC voltage is applied to the antifuse 6 for improving the mechanical strength of the continuity part of the antifuse to make an AC current flow through the antifuse.

Inventors:

SUZUKI CHIKASHI
OKUYAMA KOSUKE
TAKEDA TOSHIFUMI
KUBOTA KATSUHIKO

Application Number:

JP9854894A

Publication Date:

November 21, 1995

Filing Date:

May 12, 1994

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

H01L21/82; H01L27/118; (IPC1-7): H01L21/82; H01L27/118

Attorney, Agent or Firm:

Yamato Tsutsui

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