Title:
MANUFACTURE OF SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
Japanese Patent JPH04249384
Kind Code:
A
Abstract:
PURPOSE:To eliminate wafer cracks and to improve manufacture yield by forming an etching stop layer on a semiconductor substrate, by forming a multilayer structure including an active layer thereon and by removing the semiconductor substrate by etching thereafter. CONSTITUTION:An InGaAsP layer 2a of composition of thickness of 1mum and wavelength of 1.2mum and an N-type InP clad layer 3 of thickness of about 3mum are formed on an about 400mum-thick N-type InP substrate 1. An InGaAsP active layer 4 of composition of thickness of about 1mum and wavelength of 1.3mum and a P-type InP clad layer 5 of thickness of about 100mum are further formed. An epitaxial growth layer side of an epitaxial wafer is covered with an organic matter and the N-type InP substrate 1 alone is removed by selective etching from the side of time N-type InP substrate 1 using hydrochloric acid. Then, electrodes 7, 9 and an insulating film 8 are formed.
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Inventors:
MURAKAMI TOMOKI
Application Number:
JP1412691A
Publication Date:
September 04, 1992
Filing Date:
February 05, 1991
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L33/14; H01L33/30; H01L33/44; H01S5/00; H01S5/02; (IPC1-7): H01L33/00; H01S3/18
Attorney, Agent or Firm:
Uchihara Shin