Title:
MANUFACTURE OF SEMICONDUCTOR LIGHT-RECEIVING DEVICE
Document Type and Number:
Japanese Patent JPS61212073
Kind Code:
A
Abstract:
PURPOSE:To utilize the liquid-phase growth deposition for obtaining a burying- type planar avalanche photodiode having InGaAs, InGaAsP and AlGaInAs layers as a light-absorbing layer and an AlInAs layer as a multiplication layer, by providing an InP intermediate layer on the AlInAs multiplication layer. CONSTITUTION:An N-type InP substrate 1 is provided thereon with an N-type InP buffer layer 2, an N-type InGaAs light-absorbing layer 3, an N-type InGaAsP layer 4 and an N-type InP layer 5. An N-type AlInAs multiplication layer 6 and an N-type InP intermediate layer 7 are further provided and selectively etched such that mesa-shaped multiplication and intermediate layers 6 and 7 are left in a light-receiving region. The superficial layers of the InP intermediate layer 7 and the InP layer 5 are melted back. An N-type InP layer 9 is formed by growth so as to bury the layered structure of the multiplication and intermediate layers 6 and 7. A P-type impurity such as Cd is diffused to form a P-type light-receiving section 10. Since the AlInAs multiplication layer 6 which has poor drapability with InP melt is covered with the InP intermediate layer 7, it allows the liquid phase growth of the InP burying layer 9 to be performed thereon. Thus, a planar structure can be obtained easily.
Inventors:
YAMAZAKI SUSUMU
KISHI YUTAKA
KISHI YUTAKA
Application Number:
JP5372185A
Publication Date:
September 20, 1986
Filing Date:
March 18, 1985
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L31/107; (IPC1-7): H01L31/10
Attorney, Agent or Firm:
Koshiro Matsuoka
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