MANUFACTURE OF SEMICONDUCTOR MEMORY DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR MEMORY DEVICE

Document Type and Number:

Japanese Patent JPH0637274

Kind Code:

A

Abstract:

PURPOSE: To provide a method of easily manufacturing a semiconductor memory device stabilized in capacity and lessened in number of processes by a method wherein a lower electrode of polysilicon which forms a fin is formed at the same time.

CONSTITUTION: A first process where silicon dioxide films 7, 8, and 9 different from one another in impurity concentration are successively formed in layers, a second process where a contact hole 10 is bored in the silicon dioxide films 7, 8, and 9 at a prescribed point through a fine working process, a third process where the contact hole 10 is subjected to wet etching with hydrofluoric acid, and a fourth process where a conductive film 13 is formed on the etched part are provided. Moreover, a process where a silicon nitride film 6 is formed before the silicon dioxide films 7, 8, and 9 are formed is provided.

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Inventors:

MURAI ICHIRO

Application Number:

JP20971092A

Publication Date:

February 10, 1994

Filing Date:

July 14, 1992

Export Citation:

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Assignee:

NIPPON STEEL CORP

International Classes:

H01L27/04; H01L21/822; H01L21/8242; H01L27/10; H01L27/108; (IPC1-7): H01L27/108; H01L27/04

Attorney, Agent or Firm:

Kokubun Takaetsu

Next Patent: SEMICONDUCTOR MEMORY AND MANUFACTURE THEREOF