Title:
MANUFACTURE OF SEMICONDUCTOR MEMORY
Document Type and Number:
Japanese Patent JPH04328863
Kind Code:
A
Abstract:
PURPOSE: To manufacture a semiconductor memory, which is high in integration degree, is high in performance and moreover, is high also in reliability.
CONSTITUTION: In a peripheral circuit part 14, the sidewalls of a polysilicide film 23 are formed of an SiO2 film 26 only formed at a temperature lower than the silicifying temperature of W and in a memory cell part 13, the sidewalls of the polysilicide film 23 and an SiO2 film 24 are formed of an SiO2 film 34 formed at a temperature higher than the silicifying temperature of W and the film 26. As this result, the film 23 is not exposed in after the formation of the film 34 and a WSi2 film 35 is not peeled from a polycrystalline Si film 21 in this film 23.
Inventors:
KURODA HIDEAKI
Application Number:
JP12511391A
Publication Date:
November 17, 1992
Filing Date:
April 26, 1991
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/28; H01L21/8242; H01L27/10; H01L27/108; H01L27/105; (IPC1-7): H01L21/28; H01L27/108
Attorney, Agent or Firm:
Tsuchiya Masaru