Title:
MANUFACTURE OF SEMICONDUCTOR PHOTODETECTOR
Document Type and Number:
Japanese Patent JPS6459967
Kind Code:
A
Abstract:
PURPOSE:To form a guard ring with a relieved curvature and free from alignment discrepancy by one photoresist process and one ion implantation process by a method wherein the thickness of a mask for ion implantation is made to be thicker toward the outer circumference. CONSTITUTION:After an SiO2 film 2 is formed on an n-type InP layer 1, a photoresist layer 3 is applied. Then a guard ring pattern is exposed to an electron beam 4. At that time, the rate of the exposure is gradually reduced toward the outer circumference. After that, the photoresist film of the part intensely exposed is removed by development and the difference in level of the photoresist layer is formed corresponding to the rate the exposure in the part where the rate of the exposure is varied. Further, after an aperture is formed by removing the exposed SiO2 film, Be<+> ions 5 are implanted with the photoresist layer and the remaining SiO2 film as a mask for implantation. Finally, by annealing, a guard ring 10 with a relieved curvature is obtained in the InP layer 1. Thus, the guard ring with the relieved curvature can be formed by one ion implantation process and a local breakdown caused by the alignment discrepancy can be avoided.
Inventors:
KUSAKABE ATSUHIKO
Application Number:
JP21822487A
Publication Date:
March 07, 1989
Filing Date:
August 31, 1987
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L31/107; H01L31/10; (IPC1-7): H01L31/10
Attorney, Agent or Firm:
Uchihara Shin
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