MANUFACTURE OF SEMICONDUCTOR RADIATION SENSOR

Title:

MANUFACTURE OF SEMICONDUCTOR RADIATION SENSOR

Document Type and Number:

Japanese Patent JPH05183180

Kind Code:

A

Abstract:

PURPOSE:To provide a method for manufacturing a semiconductor radiation sensor wherein even when applying a high voltage between its electrodes, the electrons and holes injected from its electrodes can be suppressed enough and the electrical characteristic of its semiconductor substrate is not changed. CONSTITUTION:On one principal surface of a substrate made of a semiconductor single crystal, a first epitaxial layer of one conduction type, which has a band gap not less than the substrate, is formed. On the other principal surface of the substrate, a second epitaxial layer of the other conduction type, which has a band gap not less than the substrate, and on the first and second epitaxial layers, electrodes are formed respectively. Therefore, a semiconductor radiation sensor is obtained wherein (1) high-speed sensing is made possible, and (2) its S/N ratio is improved remarkably, and (3) its energy resolution is excellent.

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Inventors:

IWASE YOSHITOMO

Application Number:

JP35679391A

Publication Date:

July 23, 1993

Filing Date:

December 26, 1991

Export Citation:

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Assignee:

NIPPON MINING CO

International Classes:

G01T1/24; H01L21/36; H01L31/09; (IPC1-7): G01T1/24; H01L21/36; H01L31/09

Attorney, Agent or Firm:

Hiroshi Namikawa

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