Title:
MANUFACTURE OF SEMICONDUCTOR SINGLE CRYSTALLINE FILM
Document Type and Number:
Japanese Patent JPS5892213
Kind Code:
A
Abstract:
PURPOSE:To obtain a large size semiconductor single crystalline film by a method wherein the semiconductor single crystalline film is fused by local heating under the condition that stress is applied to the polycrystalline or amorphous semiconductor film. CONSTITUTION:In the drawing, the numeral 1 is a substrate, 2 is an insulator and 4 is a polycrystalline or amorphous semiconductor film forming a semiconductor element on the film when single crystallization is done and stress is applied to the film in an arrow. When a laser beam is aimed at the semiconductor film having such structure, the semiconductor film is fused and is recrystallized when no irradiation is made. At that time, single crystallization proceeds in the direction perpendicular to the direction previously applying stress to the semiconductor film and the single crystallization extends over a wide area.
Inventors:
SUGAHARA KAZUYUKI
ITOU HIROMI
ITOU HIROMI
Application Number:
JP19353081A
Publication Date:
June 01, 1983
Filing Date:
November 28, 1981
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/20; (IPC1-7): H01L21/263; H01L21/84
Attorney, Agent or Firm:
Shinichi Kusano