Title:
MANUFACTURE OF SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPH01194413
Kind Code:
A
Abstract:
PURPOSE:To form a single crystalline semiconductor layer having a large area on an insulating film by forming the film having a linear opening extending in the direction (100) of a semiconductor substrate on the substrate having an orientation in a plane (100), and when vapor growing a semiconductor layer on the substrate and the film. CONSTITUTION:An insulating film 2, such as an SiO2 film is formed, for example, by a thermal oxidation on a semiconductor substrate 1, such as a p-type single crystalline Si substrate in an orientation in a plane (100). Then, after a photoresist pattern of predetermined shape is formed by a photolithography on the film 2, and with the pattern as a mask the film 2 is etched, for example, by reactive ion etching. Thus, a linear opening 2a extending in a direction (100) of the substrate 1 is formed. Thus, a line and space pattern extending in the direction (100) of the substrate 1 is formed. Then, with the substrate 1 exposed in the opening 2a of the film 2 as a seed crystal a p-type Si epitaxial layer 3 is, for example, formed by selectively vapor epitaxially growing Si on the substrate 1 and the film 2.
Inventors:
OSHIMA TAKEFUMI
HAYASHI HISAO
HAYASHI HISAO
Application Number:
JP1896388A
Publication Date:
August 04, 1989
Filing Date:
January 29, 1988
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/205; H01L21/336; H01L21/84; H01L27/00; H01L29/78; H01L29/786; (IPC1-7): H01L21/205; H01L21/84; H01L27/00; H01L29/78
Attorney, Agent or Firm:
Masatomo Sugiura