PURPOSE: To realize manufacture of an element substrate with a minimum overhang quantity in regard to fabrication of a laminated SOI substrate and to realize improvement of the film quality of a substrate periphery and improvement of yield by decreasing generation of dust from the periphery of the substrate.

CONSTITUTION: A support substrate 1 comprising a semiconductor is stuck to an element substrate 2, which comprises a semiconductor and is laminated with an insulating film 3, to form a laminated substrate. The entire laminated substrate is covered with a semiconductor film 4 of the same material as that of the element substrate 2. The element substrate 2 constituting the laminated substrate is polished to a preset thickness. The semiconductor film 4 is subjected to selective removal by etching. After finish polishing, residue of the insulating film 3 in the periphery of the element substrate 2 is removed by etching.